Triode/MOS tube/transistor/module

Dual N-channel, 60V, 510mA, 2.4Ω@10V

1200V 6A High Voltage MOS

N-channel 60V 115mA

-60V/-6.2A /P channel

MOSFET N-channel, VDSS withstand voltage 650V, ID current 10A, RDON on-resistance 1.05R@VGS 10V(MAX), VGS(th) turn-on voltage 2.0-4.0V

This is a 100 V N-channel power MOSFET.

This P-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 0.3A Power (Pd): 0.35W On-resistance (RDS(on)@Vgs,Id): 1.2mΩ@10V ,0.2A threshold voltage (Vgs(th)@Id): 0.8V-1.6V@250uA