Triode/MOS tube/transistor/module

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 250mV@100mA HFE: 200-400

N-channel, 20V, 300mA, 1.5Ω@4V

80V, N-Channel NexFET™ Power MOSFET, CSD19506KCS 3-TO-220 -55 to 175

This device is designed to provide the highest energy efficiency and thermal performance for synchronous buck converters. Low rDS(on) and gate charge provide excellent switching performance.

N-channel, 600V, 20A, 0.15Ω@10V

These P-channel enhancement mode field effect transistors are produced using a proprietary planar stripe DMOS process. This advanced process is specially adapted to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.