Triode/MOS tube/transistor/module

200V/8.3A/N channel

N-channel, 30V, 9A, 18.5mΩ@10V

N-channel, 100V, 96A, 10mΩ@10V

N-channel, 650V, 4A, 2.1Ω@10V

Semiconductor transistor field effect transistor MOS tube, TO-252, P channel, withstand voltage: -30V, current: -50A, 10V internal resistance (Max): 0.012Ω, 4.5V internal resistance (Max): 0.016Ω, power: 60W

N-channel, 600V, 2.0A, 4.4Ω@10V

Type: N-Channel Drain-Source Voltage (Vdss): 50V Continuous Drain Current (Id): 0.2A Power (Pd): 0.35W On-Resistance (RDS(on)@Vgs,Id): 1.5mΩ@10V,0.2 A threshold voltage (Vgs(th)@Id): 1.6V@250uA