Triode/MOS tube/transistor/module

N channel

N-channel, 550V, 16A, 0.192Ω@10V

This high voltage NPN bipolar transistor is suitable for general switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.

PNP+PNP, Vceo=-40V, Ic=-0.6A, hfe=100~300

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -2.9 VGS(th)(v) -0.5 RDS(ON)(m?)@4.43V 100 Qg(nC) @4.5V 5.6 QgS(nC) 0.72 Qgd(nC) 1.45 Ciss(pF) 332 Coss(pF) 48 Crss(pF) 42

P-channel, -60V, -8A, 48mΩ@-10V

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 72A Power (Pd): 64W On-Resistance (RDS(on)@Vgs,Id): 5.1mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 2.5V@250uA Gate charge (Qg@Vgs): 29nC@10V Operating temperature: -55℃~+150℃@(Tj) BLDC (brushless motor) recommended material, Vds= 40V Id=72A Rds=5.1mΩ(6.8mΩ max)?DFN5x6encapsulation;

Type: N-channel Drain-source voltage (Vdss): 85V Continuous drain current (Id): 180A Power (Pd): 250W On-resistance (RDS(on)@Vgs,Id: 2.3mΩ@10V, 50A Threshold voltage ( Vgs(th)@Id): 3@250uA Gate charge (Qg@Vgs) 138.3nC@10V Input capacitance (Ciss@Vds): [email protected], Vds=85v Id=180A Rds=2.3mΩ, operating temperature : -55℃~+150℃@(Tj)