Triode/MOS tube/transistor/module

Type(P)/ESD(N)/VDS-30(V)/VGS20(±V)/VGS(th)-1.2~-2.5(V)/ID-70(A)

This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.

MOS tube type: P channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 4.5Ω@10V, 300mA

This NPN transistor is suitable for general purpose amplifier applications. The device features SOT-723 encapsulation and is suitable for low power surface mount applications where board space is at a premium.

PNP

N-channel 30V 15.5A

New four-way high withstand voltage, high current Darlington transistor array 1, 500mA collector output current (single channel); 2, high voltage resistance (50V); 3, input compatible TTL/CMOS logic signal; 4, wide range Applied to relay drive; 5, electrostatic capacity: 4000V (HBM)