Triode/MOS tube/transistor/module

P-channel, -60V, -0.15A, 8Ω@-10V

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

N-channel, 200V, 40A

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -88 VGS(th)(v) -1.8 RDS(ON)(m?)@4.515V 12 Qg(nC) @4.5V - QgS(nC) 11 Qgd(nC) 9 Ciss(pF) 3500 Coss(pF) 600 Crss(pF) 25

Type NPN IC(A) 0.15 VCBO(V) 60 VCEO(V) 50 VEBO(V) 5 VCE(sat)(V) 0.3