Triode/MOS tube/transistor/module

N-channel, 500V, 18A

16A, 700V, Triac.

Field effect transistor (MOSFET) N+N channel, VDSS withstand voltage 40V, ID current 12A, RDON on-resistance 16mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.0V,

The MJE/MJF13007 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. These devices are suitable for 115 and 220 V switch-mode applications such as switching regulators, inverters, motor controls, solenoid valve/relay drivers, and reflective circuits.

UltraFET devices combine features to deliver benchmark efficiency in power conversion applications. These devices are optimized for rDS(on), low ESR, low total charge and Miller gate charge for high frequency DC/DC converters.

P-channel, -150V, -0.84A, 1.77Ω@-10V

N channel