Triode/MOS tube/transistor/module

N-channel, 40V, 3.6A, 56mΩ@10V

Field effect transistor (MOSFET) type: P-channel drain-source voltage (Vdss): 30V continuous drain current (Id): 40A power (Pd): 3.6W on-resistance (RDS(on)@Vgs,Id): 11mΩ @10V,10A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 15nC@10V Input Capacitance (Ciss@Vds): 1.65nF@25V ,Vds=30V Id=40A Rds=11mΩ, working temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 4.1A Power (Pd): 1.32W On-resistance (RDS(on)@Vgs,Id): 70mΩ@10V,3A

N-channel 80V 130A

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 145 VGS(th)(v) 1.6 RDS(ON)(m?)@4.366V 3.1 Qg(nC)@4.5V 22 QgS(nC) 4.3 Qgd(nC) 8.3 Ciss(pF) 2450 Coss(pF) 590 Crss(pF) 245

N-channel, 650V, 47A, 70mΩ@10V

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N-channel, 900V, 1.2?@10V, 9A