Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
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Convert Semiconductor
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DIODES (US and Taiwan)
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BL (Shanghai Belling)
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Power MOSFET, 40 V, 0.67 mΩ, 370 A, single N-channel
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Prisemi (core guide)
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Infineon (Infineon)
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NCE (Wuxi New Clean Energy)
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This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.
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TECH PUBLIC (Taizhou)
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DIODES (US and Taiwan)
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SINO-IC (Coslight Core)
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HXY MOSFET (Huaxuanyang Electronics)
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N-channel, VDSS withstand voltage 30V, ID current 80A, RDON on-resistance 4mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-2.5V,
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