Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
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This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
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NCE (Wuxi New Clean Energy)
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Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -7.1 VGS(th)(v) -0.5 RDS(ON)(m?)@4.89V 17 Qg(nC) @4.5V 32 QgS(nC) 6.8 Qgd(nC) 6.9 Ciss(pF) 2000 Coss(pF) 800 Crss(pF) 620
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APM (Jonway Microelectronics)
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PNP, Vceo=-25V, Ic=-1.5A, hfe=200~350, silk screen Y2
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DIODES (US and Taiwan)
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NCE (Wuxi New Clean Energy)
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NCE (Wuxi New Clean Energy)
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Infineon (Infineon)
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N-channel, 30V, 62A, 12mΩ@10V
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UMW (Friends Taiwan Semiconductor)
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