Triode/MOS tube/transistor/module

N-Channel Enhancement Mode Field Effect Transistor

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 60A On-Resistance (RDS(on)@Vgs,Id): 6mΩ@10V 9Ω@4.5V, Threshold Voltage (Vgs(th )@Id): 1.2V@250uA

N-channel, 600V, 4A, 2.5Ω@10V

P-channel, low-voltage MOSFETs

Automotive power MOSFETs capable of withstanding high energy in avalanche and commutation modes. Suitable for low voltage high speed switching applications in power supplies, converters and power motor control. These devices are especially useful in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety margin against unintended transient voltages. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.

HFE:>80

This P-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low in-line power loss in a very small surface-mount enclosure.

Voltage VDSS600V, conduction resistance Rds5 ohms, charge Qg13nC, current ID2A