Triode/MOS tube/transistor/module

N-channel, 500V, 3.3A, 3Ω@10V

20V-20V,/ 0.82A,-0.57A/ N+P

NPN, Vceo=45V, Ic=1A, hfe=100~250

N-channel, 650V, 18A, 0.35Ω@10V

N-channel 400V 10A

Transistor type: 2 NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 1W , Characteristic frequency (fT): 300MHz, Operating temperature: -55℃~+150 ℃@(Tj)

N-channel, 30V, 185A, 1.1mΩ