Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 100 VGS(th)(v) 1.5 RDS(ON)(m?)@4.363V 3.2 Qg(nC)@4.5V 56.9 QgS(nC) 13.8 Qgd(nC) 23.5 Ciss(pF) 5935 Coss(pF) 725 Crss(pF) 538

CSD19534Q5A 100-V, N-Channel NexFET Power MOSFET, CSD19534Q5A

Transistor type: NPN, collector-emitter breakdown voltage (Vceo): 50V collector current (Ic): 100mA R1=22K R2=22K

PNP, 60V, 10A

N-channel, 100V, 3.1A, 0.126Ω@10V

N-channel, 800V, 6A, 0.9Ω@10V

NPN, Vceo=20V, Ic=2A

P-channel, 60V, 14A