Triode/MOS tube/transistor/module

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MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 27/35 Continuous Drain Current ID (A) 12

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20V N-channel MOS

This family of plastic, mid-power NPN transistors can be used in amplifier and switching applications.

PNP, Vceo=50V, Ic=100mA, hfe=80~140

This N-channel enhancement mode MOSFET is produced using a patented high cell density DMOS technology. This product minimizes on-resistance while providing robust, reliable and fast switching performance. The BSS123 is especially suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.