Triode/MOS tube/transistor/module

PNP, Vceo=-600V, Ic=-1A, hfe=60~120

Transistor type: 1 NPN-pre-biased Power (Pd): 150mW DC current gain (hFE@Ic,Vce): 30@5mA, 5V DTC114EE-F2-0000HF

Configuration Single Type N-Ch VDS(V) 650 VGS(V) 30 ID(A)Max. 4 VGS(th)(v) 3 RDS(ON)(m?)@4.508V - Qg(nC)@4.5V - QgS(nC) 2.3 Qgd(nC) 2.1 Ciss(pF) 550 Coss(pF) 46 Crss(pF) 2.3

NPN

Structure PNP Withstand Voltage/V 40V Collector Current (IC) 200mA MPQ 3K

Voltage: 1200V On-resistance: 160mΩ SiC MOSFET

N-channel, 30V, 80A, 5mΩ@10V

NPN