Triode/MOS tube/transistor/module

Ultra high voltage MOS tube

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 30V Collector current (Ic): 100mA Power (Pd): 200mW 3K PNP, Vceo=-30V, Ic=-0.1A, hfe=220~475, silk screen 3K

N-channel, 800V, 7A

N-channel, 100V, 1.8A, 240mΩ@10V

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 15 VGS(th)(v) 2 RDS(ON)(m?)@4.476V 115 Qg(nC)@4.5V - QgS(nC) 4.9 Qgd(nC) 5.8 Ciss(pF) 940 Coss(pF) 80 Crss(pF) 50

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 6.5/8 Continuous Drain Current ID (A) 15

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P-channel, -30V, -5.6A, 46mΩ@-10V

N-Channel, PowerTrench MOSFET, 80V, 220A, 3.0mΩ