Triode/MOS tube/transistor/module

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 150mA Power (Pd): 200mW Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 300mV@50mA ,5mA DC current gain (hFE@Ic,Vce): 100@10mA,1V

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

PNP

Polarity NPN Dissipated power (W) 0.35 Maximum collector current (mA) 200 Collector- base voltage (V) 400 Saturation voltage drop (V) 0.4 Collector/ base current (mA) 1/0.1 Maximum operating frequency (MHz) 50