Triode/MOS tube/transistor/module

This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses. This IGBT is ideal for UPS and solar applications. This device integrates a soft, fast combined encapsulation freewheeling diode with low forward voltage.

LKD1800D two-way Darlington tube motor driver, high withstand voltage, small encapsulation, output withstand voltage up to 50V

NPN, Vceo=25V, Ic=1.5A, hfe=160~300

Drain-source voltage (Vdss): -100V, continuous drain current (Id) (at 25°C): -1A, gate-source threshold voltage: -1~-2.5V@250uA, drain-source on-resistance: 0.65Ω @Vgs=-1A,-10V, maximum power dissipation (Ta=25°C): 0.5W, type: P-channel