Triode/MOS tube/transistor/module

N-channel, 60V, 80A

Transistor type: 2 PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW Collector cut-off current (Icbo): 50nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@50mA, 5mA DC current gain (hFE@Ic,Vce): 100@10mA, 1V Characteristic frequency (fT): 250MHz Operating temperature: +150℃@(Tj)

BC857C-F2-0000HF