Triode/MOS tube/transistor/module
This family of digital transistors is intended to replace a single device and its external resistor bias network. A bias resistor transistor (BRT) consists of a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.
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MOSFET, -3.5 A, ~30 V, P-Channel, TSOP~6
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ST (STMicroelectronics)
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This NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.
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Littelfuse (American Littelfuse)
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Cmos (Guangdong Field Effect Semiconductor)
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APM (Jonway Microelectronics)
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DIODES (US and Taiwan)
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CJ (Jiangsu Changdian/Changjing)
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PNP, Vceo=-150V, Ic=-1.5A, hfe=40~140
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Cmos (Guangdong Field Effect Semiconductor)
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Infineon (Infineon)
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