Triode/MOS tube/transistor/module
P-channel, -30V, -4.8A, 49mΩ@-10V
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Type: P-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): -4A Power (Pd): 1.56W On-resistance (RDS(on)
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This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.
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NIKO-SEM (Nickerson)
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Slkor (Sakor Micro)
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Type PNP IC(A) -0.6 VCBO(V) -60 VCEO(V) -40 VEBO(V) -5 VCE(sat)(V) -0.67
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Infineon (Infineon)
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N-channel, 60V, 99A, 8.3mΩ@4.5V
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DIODES (US and Taiwan)
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Cmos (Guangdong Field Effect Semiconductor)
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ElecSuper (Jingxin Micro)
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Polarity NPN Dissipated Power (W) 0.2 Maximum Collector Current (mA) 100 Collector- Base Voltage (V) 80 Saturation Voltage Drop (V) 0.5 Collector/ Base Current (mA) 100/5 Maximum operating frequency (MHz) 100
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GOODWORK (Good Work)
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Agertech (Agertech)
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ST (STMicroelectronics)
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ST (STMicroelectronics)
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