Triode/MOS tube/transistor/module

N-channel 600V 0.4A

NMOS 20V 800mA RDS(on)=300mΩ WITH ESD SOT-883

Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 90A Power (Pd): 105W On-Resistance (RDS(on)@Vgs,Id): 8.2mΩ@10V,25A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate charge (Qg@Vgs): 138nC@10V Input capacitance (Ciss@Vds): 6.55nF@30V, Vds=60V Id=90A Rds=8.2mΩ, working Temperature: -55℃~+150℃@(Tj)

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DC reverse withstand voltage (Vr) 1kV average rectified current (Io) 8A forward voltage drop (Vf) 1V@4A reverse current (Ir) 5μA@1kV forward surge current (Ifsm ) 350A Working temperature -55℃~+150℃@(Tj)

Industrial power MOSFETs for compact and efficient designs with 5x6mm flat lead encapsulation and high thermal performance.

N-channel, 30V, 7A (Ta)