Triode/MOS tube/transistor/module

CSD16325Q5 25V, N-Channel NexFET MOSFET™, Single SON5x6, 2.2mΩ

P channel -12V -4.5A

This single P-channel MOSFET is designed using an advanced Power Trench process to optimize rDS(on)@VGS = –1.5 V.

NPN

ULN2003AI High Voltage, High Current Darlington Transistor Array

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

N-channel, 30V, 8.5A, 24mΩ@10V