Triode/MOS tube/transistor/module

N-channel, 500V, 13A, 340mΩ@10V

PNP, Vceo=-40V, Ic=-200mA

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 110A Power (Pd): 75W On-Resistance (RDS(on)@Vgs,Id): 1.8mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): 46nC@10V Input capacitance (Ciss@Vds): 2.85nF@20V Operating temperature: -55℃~+150℃@(Tj ) DFN5*6encapsulation;

650V 11A 360mΩ@10V

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Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 60V, current: 50A, 10V internal resistance (Max): 0.0095Ω, 4.5V internal resistance (Max): 0.016Ω, power: 60W