Triode/MOS tube/transistor/module

P channel -60V -2A

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 14 VGS(th)(v) 1.5 RDS(ON)(m?)@4.282V 25 Qg(nC)@4.5V - QgS(nC) 2.4 Qgd(nC) 5.3 Ciss(pF) 1191 Coss(pF) 195 Crss(pF) 41

IC(A) -0.6 VCEO(V) -40 hFE(β) 100-300 fT(MHZ) 200 VCBO(V) -40 VCE(sat)(W) -0.4 Type PNP

NPN, Vceo=25V, Ic=800mA

NPN, Vceo=15V, Ic=600mA

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Additionally, the internal gate supply ESD diodes can withstand HBM surge stress above 2kV. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as audio, laptop adapters, lighting, ATX power supplies, and industrial power applications.

RF transistor

This N-channel MOSFET is designed to increase the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.