Triode/MOS tube/transistor/module
P-channel, -30V, -5.1A, 0.074Ω@-10V
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Configuration Single Type N-Ch VDS(V) 200 VGS(V) 25 ID(A)Max. 1.2 VGS(th)(v) 4 RDS(ON)(m?)@4.81V - Qg(nC)@4.5V - QgS(nC) 2 Qgd(nC) 1.5 Ciss(pF) 280 Coss(pF) 25 Crss(pF) 8.5
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GOFORD (valley peak)
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This device includes two custom N-channel MOSFETs in a dual encapsulation. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and synchronization SyncFET (Q2) provide the best power efficiency.
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luxin-semi (Shanghai Luxin)
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VCES(V) 650 IC(A)@141℃ 20 VCE(sat)(V) 1.65 E(off)(mj) 0.1 Vf(V) 1.9
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DIODES (US and Taiwan)
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PJSEMI (flat crystal micro)
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