Triode/MOS tube/transistor/module

N-channel, 30V, 5.8A, 25.5 milliohms.

Type N Drain-Source Voltage (Vdss) 30 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 10 Input Capacitance (Ciss) 450 Reverse Transfer Capacitance Crss(pF) 22 Gate Charge (Qg) 8

Automotive Power MOSFET for compact and energy-efficient designs with 5x6mm LFPAK encapsulation and high thermal performance. AEC-Q101 qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications requiring enhanced board-level reliability.

N-channel, 30V, 6.5A, 24mΩ@10V

This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.

N+P channel, 20V, 1.5A

P-channel, -20V, -3A, 105mΩ@-4.5V

P channel, VDSS withstand voltage 20V, ID current 1.8A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.4-1.0V,

NPN, Vceo=15V, Ic=600mA