Triode/MOS tube/transistor/module

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced process is specifically designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher energy efficiency. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.

N-channel, VDSS withstand voltage 20V, ID current 6.5A, RDON on-resistance 27mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.45-1.0V, with ESD protection

NPN, Vceo=160V, Ic=600mA, hfe=100~200