Triode/MOS tube/transistor/module

This PNP bipolar transistor is suitable for low voltage, high current applications. The device features a SOT-223-4 encapsulation and is suitable for medium power surface mount applications.

N-channel, 30V, 1.4A, 160mΩ@1.4A, 10V

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -4.4 VGS(th)(v) -0.8 RDS(ON)(m?)@4.85V 50 Qg(nC) @4.5V 10.2 QgS(nC) 1.89 Qgd(nC) 3.1 Ciss(pF) 416 Coss(pF) 114 Crss(pF) 55

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.