Triode/MOS tube/transistor/module

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 160V Collector current (Ic): 1A Power (Pd): 500mW Collector cut-off current (Icbo): 1uA Collector-emitter saturation voltage (VCE(sat) @Ic,Ib): 1.5V@500mA, 50mA DC current gain (hFE@Ic,Vce): 320@200mA, 5V Characteristic frequency (fT): 15MHz Operating temperature: -55℃~+150℃@(Tj)

PNP, 300V, 8A

NPN, Vceo=60V, Ic=0.5A, hfe=100~400

Polarity NPN Dissipated Power (W) 0.3 Maximum Collector Current (mA) 500 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.6 Collector/ Base Current (mA) 500/50 Maximum operating frequency (MHz) 150

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 32 VGS(th)(v) 1.5 RDS(ON)(m?)@4.356V 30 Qg(nC)@4.5V 6.9 QgS(nC) 1.2 Qgd(nC) 2.35 Ciss(pF) 510 Coss(pF) 62 Crss(pF) 44

This device is specifically designed as a single encapsulation solution for the dual switch requirements in cellular handsets and other ultra-portable applications. It features two independent N-channel MOSFETs with low on-resistance for lowest conduction losses. For its physical size, the MicroFET 2x2 has excellent thermal performance and is well suited for linear mode applications.

N channel

Type: Dual N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 25A Power (Pd): 2W On-Resistance (RDS(on)@Vgs,Id: 7.8mΩ@10V, 10A (Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 13nC@10V Input capacitance (Ciss@Vds): 0.870nF@20V, Vds=40v Id=25A Rds=7.8mΩ, work Temperature: -55℃~+150℃@(Tj)

N-channel, 500V, 0.40?@10V, 13A