Triode/MOS tube/transistor/module

NPN, 350V, 500mA

Collector-base reverse breakdown voltage-40V, collector-emitter reverse breakdown voltage-25V, collector current IC-1000mA,

UltraFET devices combine features to deliver benchmark efficiency in power conversion applications. These devices are optimized for low rDS(on), low ESR, low total charge and Miller gate charge for high frequency DC/DC converters.

This high voltage NPN bipolar transistor is suitable for general switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 4.4 VGS(th)(v) 0.85 RDS(ON)(m?)@4.24V 45 Qg(nC)@4.5V 6.4 QgS(nC) 0.54 Qgd(nC) 1.25 Ciss(pF) 382 Coss(pF) 41 Crss(pF) 33

NPN, Vceo=150V, Ic=1.5A, hfe=40~140

N-channel, 100V, 40A, 15mΩ@10V