onsemi (Ansemi)

TSOT-23-6

taping

3000

These dual N-channel logic level enhancement mode field effect transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is suitable for replacing digital transistors in load switching applications in low voltage applications. Since no bias resistor is required, these N-channel FETs can replace several digital transistors with various bias resistors, such as the IMHxA series.