LGE (Lu Guang)

TO-247-2L

Tube

30

Diode configuration: Independent DC reverse withstand voltage (Vr): 1.2kV Average rectified current (Io): 20A Forward voltage drop (Vf): 1.45V@20A \n Silicon carbide (SiC) Schottky diode uses a new technology that can Provides excellent switching performance with higher reliability than silicon. No reverse recovery current, temperature independent switching characteristics and excellent thermal performance of Silicon carbide