onsemi (Ansemi)
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NCD57000DWR2G Half Bridge IGBT Sink 7.1A Source 7.8A Isolated High Current and High Efficiency IGBT Gate Driver with Internal Galvanic Isolation.

NCD57000DWR2G

Half Bridge IGBT Sink 7.1A Source 7.8A Isolated High Current and High Efficiency IGBT Gate Driver with Internal Galvanic Isolation.
부품 번호
NCD57000DWR2G
범주
Power Chip > Gate Driver IC
제조사/브랜드
onsemi (Ansemi)
캡슐화
SOIC-16-300mil
포장
taping
패키지 수
1000
설명하다
The NCD57000 is a high current single-channel IGBT driver with internal galvanic isolation for high system efficiency and reliability in high power applications. Features include complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate UVLO, DESAT protection, soft shutdown on DESAT, and separate high and low driver outputs (OUTH and OUTL ). The NCD57000 can accommodate 5V and 3.3V signals on the input side, and a wide range of bias voltages on the driver side, including negative voltage capability. The NCD57000 provides > 5 kVrms (UL1577 rated) galvanic isolation and > 1200 Viorm (working voltage). The NCD57000 uses a wide body SOIC-16 encapsulation that guarantees 8 mm creepage distance between input and output, meeting reinforced safety insulation requirements.
견적요청
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재고 69307 PCS
연락처 정보
키워드NCD57000DWR2G
NCD57000DWR2G 전자 부품
NCD57000DWR2G 매상
NCD57000DWR2G 공급자
NCD57000DWR2G 유통 업체
NCD57000DWR2G 데이터 테이블
NCD57000DWR2G 사진
NCD57000DWR2G 가격
NCD57000DWR2G 권하다
NCD57000DWR2G 최저 가격
NCD57000DWR2G 찾다
NCD57000DWR2G 구매
NCD57000DWR2G 칩숏