Triode/MOS tube/transistor/module

TRANS NPN 40V 0.2A

N-channel, 30V, 50A, 7mΩ@10V

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 600mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 100@150mA, 2V 100~300 PNP, Vceo=-40V, Ic=-0.6A

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This N-channel enhancement mode field effect transistor is produced using Fairchild's proprietary high cell density DMOS technology. This product minimizes on-resistance while providing rugged, reliable, and fast switching performance. This product can be used in most applications requiring up to 400mA DC and can deliver up to 2 A of pulsed current. This product is especially suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

This device is a bipolar junction transistor with high current, low saturation voltage, and high-speed switching characteristics. Suitable for automotive applications. AEC-Q101 qualified and PPAP capable.

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Dual P-channel, -30V, -1.8A, 0.133Ω@-10V