Triode/MOS tube/transistor/module

P channel, -20V-2.4A

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This dual N-channel logic level enhancement mode field effect transistor is produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed to replace bipolar digital transistors and small signal MOSFETs in low voltage applications. Because no bias resistor is required, these dual digital FETs can replace several digital transistors with various bias resistor values.

NPN,90V,3A

Transistor type: NPN, collector-emitter breakdown voltage (Vceo): 50V collector current (Ic): 100mA R1=4.7K R2=47K

This P-channel 2.5V specified MOSFET is a robust gate version of the advanced PowerTrench process. It is optimized for power management applications with wide gate drive voltage ratings (2.5V – 12V).