Triode/MOS tube/transistor/module

N-channel, 600V, 10A, 730mΩ@10V

N channel

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Type: P-channel Drain-source voltage (Vdss): -20V Continuous drain current (Id): -4.5A Power (Pd): 1.5W On-resistance (RDS(on)