Triode/MOS tube/transistor/module
MOSFET Type N Drain-Source Voltage (Vdss) (V) 40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 5.7/7.5 Continuous Drain Current ID (A) 40
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CJ (Jiangsu Changdian/Changjing)
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APM (Jonway Microelectronics)
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HXY MOSFET (Huaxuanyang Electronics)
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N-channel, VDSS withstand voltage 20V, ID current 150A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.4-1.0V,
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CJ (Jiangsu Changdian/Changjing)
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N-channel, 60V, 0.2A, 6Ω@4.5V
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Pre-biased NPN, Vceo=50V, Ic=100mA
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PJSEMI (flat crystal micro)
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Transistor type: NPN, collector-emitter breakdown voltage (Vceo): 50V collector current (Ic): 100mA R1=2.2K R2=47K
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China Resources Huajing
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YONGYUTAI (Yongyutai)
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Bidirectional 8A, 600V, same as BTA08-600.
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Wayon (Shanghai Wei'an)
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HXY MOSFET (Huaxuanyang Electronics)
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DIODES (US and Taiwan)
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