Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
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TECH PUBLIC (Taizhou)
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UMW (Friends Taiwan Semiconductor)
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TECH PUBLIC (Taizhou)
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CBI (Creation Foundation)
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Configuration Dual Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 6 VGS(th)(v) 1.6 RDS(ON)(m?)@4.296V 36 Qg(nC)@4.5V 7.5 QgS(nC) 3.24 Qgd(nC) 2.75 Ciss(pF) 815 Coss(pF) 95 Crss(pF) 60
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DIODES (US and Taiwan)
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Dual NPN, Vceo=40V, Ic=200mA
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Infineon (Infineon)
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Long-Tek (Long Xia)
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DIODES (US and Taiwan)
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N-Channel, PowerTrench MOSFET, 60V, 110A, 1.8mΩ
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Agertech (Agertech)
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Agertech (Agertech)
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The device includes two custom N-channel MOSFETs in a dual PQFN encapsulation. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and synchronization SyncFET (Q2) provide the best power efficiency.
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