Triode/MOS tube/transistor/module

Type P Drain-Source Voltage (Vdss) -30 Threshold Voltage (Vgs) 25 Continuous Drain Current (Id) - 10.5 On-Resistance (mΩ) 19 Input Capacitance (Ciss) 999 Reverse Transfer Capacitance Crss(pF) 170 Gate Charge (Qg) 20

PNP, Vceo=-25V, Ic=-1.5A

N-channel, low-voltage MOSFETs

This N-channel MOSFET is specifically designed to increase the overall energy efficiency and minimize the switching node noise of DC-DC converters, either synchronously or conventionally switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

This high voltage bipolar power Darlington transistor is designed for direct sensing applications such as electronic ignition, switching regulators, and motor control.