Triode/MOS tube/transistor/module

N-channel, 60V, 7.6A, 25mΩ@10V

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

N-channel, 650V, 12A, 0.7Ω@10V

P-channel, -60V, -5.3A, 0.095Ω@-10V

DTA143XUA-F2-0000HF

N-channel, 20V, 0.34A, 5Ω@10V

Continuous drain current (Id) (at 25°C): -7A, drain-source voltage (Vdss): -20V, gate-source threshold voltage: -0.5~1.4V@ 250uA, drain-source on-resistance: <60mΩ @Vgs=-10V, <87mΩ @Vgs=-4.5V, maximum power dissipation (Ta=25°C): 0.9W, type: -7A/-20V P-channel