Triode/MOS tube/transistor/module

Type N VDSS(V) 200 ID@TC=93?C(A) 18 PD@TC=93?C(W) 150 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.73V -

This high voltage PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-223 encapsulation and is suitable for low power surface mount applications.

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 600mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 100@150mA, 10V

PNP, Vceo=-100V, Ic=-0.1A

Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -12A Power (Pd): 3.1W On-Resistance (RDS(on)@Vgs,Id): 9.5mΩ@10V, -12A Threshold voltage (Vgs(th)@Id): -1.5V@250uA P-channel, -30V, -12A, 9.5mΩ@-10V

N-channel, 900V, 9A

NPN, Vceo=30V, Ic=0.1A, hfe=200~450, silk screen 1K

N-channel, 100V, 127A, 6mΩ@10V

This dual NPN PNP bipolar transistor is suitable for general purpose amplifier applications. This device features SC-74 encapsulation for low power surface mount applications.