Triode/MOS tube/transistor/module

This P-Channel enhancement mode Power MOSFET product is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technologies. This advanced MOSFET technology has been tailored to reduce on-resistance and provide excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

NPN,Vceo=40V,Ic=200mA

N-channel, 1050V, 4A, 2Ω@10V

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 4.1A Power (Pd): 1.5W On-Resistance (RDS(on)@Vgs,Id): 60mΩ@10V, 4.1A Threshold voltage (Vgs(th)@Id): 1.2V@250uA Operating temperature: +150℃@(Tj)

Small Signal Bipolar Transistor

N-channel 40A 200V

transistors,PNP 25V 500mA 300mW,SOT-23