Triode/MOS tube/transistor/module

N-Channel 30-V (D-S) MOSFET VDS 30V, VGS±12V, ID5.8A, IDM30A, Is2.5A

N-Channel Power MOSFET VDS = 30V,ID =5.8A, RDS(ON) < 30mΩ @ VGS =10V, RDS(ON) < 42mΩ @ VGS =4.5V

POWER MOSFET RDS(ON) <60mΩ @ VGS= -10V, RDS(ON) <95mΩ @ VGS= -4.5V, BVDSS--30V,

Type(N)/ESD(N)/VDS20(V)/VGS12(±V)/VGS(th)1(V)/ID2.9(A)

N-channel, 30V, 70A

N channel

SuperFET II MOSFETs are a new family of high-voltage super-junction MOSFETs that utilize advanced charge-balancing techniques to achieve exceptionally low on-resistance, as well as lower gate charge. This advanced MOSFET is designed to minimize conduction losses while achieving excellent switching performance. In addition to these benefits, it also offers higher extreme dv/dt rates and greater avalanche energy than conventional superjunction MOSFETs. SuperFET II MOSFETs are suitable for various switching power supply applications, contributing to system miniaturization and higher efficiency.

Triode Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 1.5A Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 200@100mA, 1V 200-350 PNP

Homopolar (NPN) Darlington transistor 30V 300mA silk screen 1M MMBTA13 with the same function and pin sequence

Low-voltage MOSFET power supply, energy storage power supply, UPS, Vds=85V Id=120A Rds=4.6mΩ (5.5mΩ max) TO-220encapsulation; fully compatible with SKD502T C467184