Triode/MOS tube/transistor/module
Infineon (Infineon)
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BLUE ROCKET (blue arrow)
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ST (STMicroelectronics)
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N-channel, 650V, 12A, 0.33Ω@10V
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DIODES (US and Taiwan)
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PNP, Vceo=-150V, Ic=-600mA
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Ruichips (Ruijun Semiconductor)
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CJ (Jiangsu Changdian/Changjing)
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This P-channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It is optimized for power management applications requiring wide gate drive voltage ratings (4.5V – 20V).
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ST (STMicroelectronics)
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CBI (Creation Foundation)
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LYG (Lingyan Pavilion)
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Slkor (Sakor Micro)
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SPS (American source core)
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DIODES (US and Taiwan)
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CJ (Jiangsu Changdian/Changjing)
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MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 10/12 Continuous Drain Current ID (A) 10
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