Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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P-channel, -20V, -3.2A
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Infineon (Infineon)
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Infineon (Infineon)
제조업 자
P-channel, -20V, -2.6A, 150mΩ@-4.5V
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The excellent gain linearity and safe operating area performance of this bipolar power transistor make it suitable for high-fidelity audio amplifier output stages and other linear applications.
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AGM-Semi (core control source)
제조업 자
Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 5.6A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 17mΩ@10V, 5.6A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 12nC@10V Input Capacitance (Ciss@Vds): 0.526nF@15V , Vds=30V Id =5.6A Rds=17mΩ, working temperature: -55℃~+150℃@(Tj);
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BLUE ROCKET (blue arrow)
제조업 자
DIODES (US and Taiwan)
제조업 자
Voltage VDSS650V, conduction resistance Rds2.8 ohms, charge Qg25nC, current ID4A
설명하다
These N-channel low-threshold 2.5V-specified MOSFETs are produced using an advanced PowerTrench process that is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance.
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APM (Jonway Microelectronics)
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