Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 3.3A Power (Pd): 1.4W On-Resistance (RDS(on)@Vgs,Id): 70mΩ@10V, 3A Threshold voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 14nC@10V Input capacitance (Ciss@Vds): 0.6nF@20V , Vds=40V Id= 3.3A Rds=70mΩ, working temperature: -55℃~+150℃@(Tj)

PNP, Vceo=25V, Ic=3A

Alternative to AS3403

Collector-base reverse breakdown voltage 40V, collector-emitter reverse breakdown voltage 25V, collector current IC500mA

Gear: 160-400

CSD25484F4 20V P-Channel FemtoFET™ MOSFET 3-PICOSTAR -55 to 150

N-channel 130A 60V