Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 15nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 600mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 290@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: -55℃~+150℃@(Tj) NPN, Vceo=30V, Ic=100mA

CSD18543Q3A 60V, N-Channel NexFET MOSFET™, Single SON3x3, 9.9mΩ

N channel

PNP, Vceo=-100V, Ic=-3A

N-channel, 40V

N-channel, 650V, 0.60?@10V, 12A

These N-channel enhancement mode field effect transistors are produced using ON Semiconductor's high cell density DMOS proprietary process. This very high-density process is uniquely suited to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are especially suitable for low-voltage applications requiring fast switching, low in-line power loss, and transient protection, such as automotive, DC/DC converters, PWM motor control, and other battery-powered circuits.