Triode/MOS tube/transistor/module

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-223 encapsulation and is suitable for medium power surface mount applications.

N-channel, 40V, 10A, 6.6mΩ@10V

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 30V, ID current 4.2A, RDON on-resistance 55mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.3V,