Triode/MOS tube/transistor/module

N-channel, VDSS withstand voltage 40V, ID current 50A, RDON on-resistance 7mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-2.5V,

-

NPN, Vceo=32V, Ic=1A

Semiconductor Transistor Field Effect Transistor MOS tube, TO-220, N channel, withstand voltage: 200V, current: 40A, 10V internal resistance (Max): 0.065Ω, power: 160W

N channel

N-channel 40V 80A

P-channel, 20V, 4.5A, 33mΩ@4.5V

PNP, Vceo=-400V, Ic=-300A